Solid state detectors use semiconducting crystals (in CRaTER's case, silicon) with n-type (electron-rich, electron conducting) and p-type (electron-deficient, hole conducting) sectors.

When a reversed bias voltage is applied at the p-type side, the unbonded electrons in the semiconductor are pushed away from the voltage source, while the holes are pulled towards it. This leaves a neutral area void of charge and current at the junction of the sectors, called the depletion region. As incoming radiation (eg gamma rays) collides with the depletion region, electron-hole pairs are formed in the material (where a once bonded electron is freed from its atom, leaving a hole). The electron and the hole respond to the applied voltage, and a small current is created. This current can be detected and later analyzed.

A cold environment greatly reduces the transmission of thermal signals. In addition, the solid state of the semiconducting material makes it easier to detect those signals attributable to freed electrons.

 
 
Annotated drawing of our current instrument design.